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International Journal of Current Research and Academic Review-e-iSSN - 2347 - 3215

IJCRAR is now DOI (CrossRef) registered Research Journal. The DOIs are assigned to all published IJCRAR Articles.

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Abstract                 Volume:5  Issue-8  Year-2017          Original Research Articles

Online ISSN : 2347 - 3215
Issues : 12 per year
Publisher : Excellent Publishers
Email : editorijcret@gmail.com

The Effect of Frequency of Electromagnetic Waves on Basic Electrical Elements in the Si of LCR Technique
Dana Abdul Aziz Al Shammari*
P.O.Box:4515/Str-Alwaha /Hail Hail/SadianEast/Saudi Arabia
*Corresponding author

In this study, the electrical properties of various silicon specimens with different conductivity types and different carrier concentration were characterized, using In-Line Four Probe (ILFP) technique and Resistivity Frequency variation technique (LCR technique) as well. The effect of the frequency on the electrical properties of these samples was also investigated. The results of the study demonstrate some conclusions and recommendations for improving the performance of silicon based solar cells as well as for further development in the field of Si technology.

Keywords: In-Line Four Probe ILFP, EM waves Gravel, Bulk resistivity, Solar cells
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How to cite this article:

Dana Abdul Aziz Al shammari. 2017. The Effect of Frequency of Electromagnetic Waves on Basic Electrical Elements in the Si of LCR TechniqueInt.J.Curr.Res.Aca.Rev. 5(8): 1-11
doi: https://doi.org/10.20546/ijcrar.2017.508.001